STS8DN6LF6AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Input Capacitance (Ciss) (Max) @ Vds :

1340pF @ 25V

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Base Part Number :

STS8DN

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

32A

FET Feature :

Logic Level Gate

Number of Terminations :

8

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.026ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

60V

Avalanche Energy Rating (Eas) :

72 mJ

Series :

Automotive, AEC-Q101, STripFET™ F6

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Power Dissipation-Max (Abs) :

3.2W

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Factory Lead Time :

20 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

8A

Power - Max :

3.2W

Rds On (Max) @ Id, Vgs :

24m Ω @ 4A, 10V