STS8N6LF6AG
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- Mfr.Part #
- STS8N6LF6AG
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 60V 8A 8SO
- Stock
- 6,900
- In Stock ：
- 6,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Automotive, AEC-Q101, STripFET™ F6
- Power Dissipation-Max :
- 3.2W Ta
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Base Part Number :
- STS8N
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 4A, 10V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 20 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1340pF @ 25V
- Datasheets
- STS8N6LF6AG
N-Channel Tape & Reel (TR) 24m Ω @ 4A, 10V ±20V 1340pF @ 25V 27nC @ 10V 60V 8-SOIC (0.154, 3.90mm Width)
STS8N6LF6AG Description
This STS8N6LF6AG is an N-channel Power MOSFET developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
STS8N6LF6AG Features
-
AEC-Q101 qualified
-
Very low on-resistance
-
Very low gate charge
-
High avalanche ruggedness
-
Low gate drive power loss
-
Logic level
STS8N6LF6AG Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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