STS8C5H30L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Dual

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Continuous Drain Current (ID) :

8A

Length :

5mm

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

8A

Resistance :

22mOhm

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Mount :

Surface Mount

Rise Time :

35ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

STripFET™ III

Height :

1.25mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pin Count :

8

Current Rating :

8A

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

Power Dissipation :

2W

Base Part Number :

STS8C5

Max Power Dissipation :

2W

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Width :

4mm

Radiation Hardening :

No

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Threshold Voltage :

1.6V

Current - Continuous Drain (Id) @ 25°C :

8A 5.4A

Gate to Source Voltage (Vgs) :

16V

Number of Pins :

8

Turn-Off Delay Time :

125 ns

Input Capacitance (Ciss) (Max) @ Vds :

857pF @ 25V

Fall Time (Typ) :

35 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

30