STS8DN3LLH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

19m Ω @ 5A, 10V

Power Dissipation :

2.7W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

40A

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Element Configuration :

Dual

Resistance :

19mOhm

Base Part Number :

STS8DN

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e4

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Max Power Dissipation :

2.7W

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Turn-Off Delay Time :

21.1 ns

Number of Elements :

2

Number of Terminations :

8

Turn On Delay Time :

4 ns

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Pin Count :

8

Series :

STripFET™ V

Terminal Form :

Gull wing

Fall Time (Typ) :

3.5 ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

724pF @ 25V

Continuous Drain Current (ID) :

10A

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

22V

Rise Time :

4.2ns