STS5DNF60L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

15V

Power Dissipation :

2W

Drain-source On Resistance-Max :

0.055Ohm

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 25V

Base Part Number :

STS5D

Vgs(th) (Max) @ Id :

2.5V @ 250μA

DS Breakdown Voltage-Min :

60V

Max Power Dissipation :

2W

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Turn-Off Delay Time :

45 ns

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

Number of Pins :

8

Fall Time (Typ) :

10 ns

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

15 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

5A

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rise Time :

28ns

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, STripFET™ II

JESD-609 Code :

e3

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Additional Feature :

LOW THRESHOLD

Number of Terminations :

8

Continuous Drain Current (ID) :

5A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Lead Free

Number of Elements :

2

Pin Count :

8

Rds On (Max) @ Id, Vgs :

45m Ω @ 2A, 10V