STS5N15F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

FET Type :

N-Channel

Resistance :

57mOhm

Fall Time (Typ) :

20 ns

Drain to Source Breakdown Voltage :

150V

Rds On (Max) @ Id, Vgs :

57m Ω @ 2.5A, 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Tc

Turn-Off Delay Time :

46 ns

ECCN Code :

EAR99

Turn On Delay Time :

9 ns

Number of Elements :

1

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Pulsed Drain Current-Max (IDM) :

20A

Base Part Number :

STS5N

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

5A

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rise Time :

13ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Number of Pins :

8

Pbfree Code :

yes

Series :

STripFET™ III

Avalanche Energy Rating (Eas) :

300 mJ

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Continuous Drain Current (ID) :

5A

Radiation Hardening :

No

JESD-609 Code :

e4

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

30