STS5P3LLH6

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Mfr.Part #
STS5P3LLH6
Manufacturer
STMicroelectronics
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 5A 8SO
Stock
4,972
In Stock :
4,972

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
5A
Number of Pins :
8
Packaging :
Cut Tape (CT)
Base Part Number :
STS5P
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Drain Current-Max (Abs) (ID) :
5A
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Operating Temperature :
150°C TJ
Rds On (Max) @ Id, Vgs :
56m Ω @ 2.5A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
P-Channel
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Power Dissipation-Max :
2.7W Ta
Input Capacitance (Ciss) (Max) @ Vds :
639pF @ 25V
Configuration :
Single
Drain to Source Voltage (Vdss) :
30V
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
5A Ta
Vgs (Max) :
±20V
Series :
DeepGATE™, STripFET™ H6
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
20 Weeks
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Datasheets
STS5P3LLH6
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STS5P3LLH6 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Base Part Number:STS5P, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:150°C TJ, Mounting Type:Surface Mount, STS5P3LLH6 pinout, STS5P3LLH6 datasheet PDF, STS5P3LLH6 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STS5P3LLH6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STS5P3LLH6


P-Channel Cut Tape (CT) 56m Ω @ 2.5A, 10V ±20V 639pF @ 25V 6nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)

STS5P3LLH6 Description


STS5P3LLH6 belongs to the family of STripFET? H6 DeepGATE? power MOSFETs provided by STMicroelectronics. Based on the STripFET? H6 technology and a new trench gate structure, it is able to provide extremely low on-resistance RDS(on), low switching gate charge, high avalanche ruggedness, and low gate drive power losses, which makes it well suited for a wide variety of applications.



STS5P3LLH6 Features


  • Low on-resistance RDS(on)

  • Low switching gate charge

  • High avalanche ruggedness

  • Low gate drive power losses

  • Available in the SO-8 package



STS5P3LLH6 Applications


  • Switching applications

  • Uninterruptible power supplies

  • Synchronous rectification


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