STS5DNF20V
- Mfr.Part #
- STS5DNF20V
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 5A 8-SOIC
- Stock
- 8,460
- In Stock :
- 8,460
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 20V
- FET Type :
- 2 N-Channel (Dual)
- JESD-609 Code :
- e4
- Drain Current-Max (Abs) (ID) :
- 5A
- Pin Count :
- 8
- Current Rating :
- 5A
- Series :
- STripFET™ II
- Continuous Drain Current (ID) :
- 5A
- Width :
- 4mm
- Base Part Number :
- STS5D
- Gate to Source Voltage (Vgs) :
- 12V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 8
- Turn On Delay Time :
- 7 ns
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA
- REACH SVHC :
- No SVHC
- Resistance :
- 40mOhm
- Fall Time (Typ) :
- 10 ns
- Peak Reflow Temperature (Cel) :
- 260
- FET Feature :
- Logic Level Gate
- Number of Elements :
- 2
- Power Dissipation :
- 2W
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Threshold Voltage :
- 2.7V
- Rise Time :
- 33ns
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 2.5A, 4.5V
- Drain to Source Breakdown Voltage :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 1.65mm
- Gate Charge (Qg) (Max) @ Vgs :
- 11.5nC @ 4.5V
- Length :
- 5mm
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 27 ns
- Transistor Application :
- SWITCHING
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- STS5DNF20V

STS5DNF20V datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at
STS5DNF20V Description
This power MOSFET is developed using STMicroelectronics' unique STripFET process, which is designed to minimize input capacitance and gate charge. This makes the device suitable for use as the main switch for advanced, highly efficient isolated DC-DC converters for telecommunications and computer applications, as well as applications with low gate charge drive requirements.
STS5DNF20V Features
? Ultra low threshold gate drive (2.7 V)
? Standard outline for easy automated surface
mount assembly
STS5DNF20V Applications
? Switching application
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