STS3DNE60L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain-source On Resistance-Max :

0.1Ohm

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Max Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

60V

Power Dissipation :

2W

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Rise Time :

30ns

JESD-609 Code :

e4

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

2 N-Channel (Dual)

Number of Pins :

8

Fall Time (Typ) :

16 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

3A

Mounting Type :

Surface Mount

Number of Elements :

2

Series :

STripFET™

Base Part Number :

STS3D

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

3A

Turn On Delay Time :

20 ns

ECCN Code :

EAR99

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

80m Ω @ 1.5A, 10V

Additional Feature :

LOW THRESHOLD

Input Capacitance (Ciss) (Max) @ Vds :

815pF @ 25V

Radiation Hardening :

No

DS Breakdown Voltage-Min :

60V