STS30N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Avalanche Energy Rating (Eas) :

525 mJ

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 15A, 10V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

30A

Drain-source On Resistance-Max :

0.0035Ohm

Vgs (Max) :

±20V

Mount :

Surface Mount

Number of Terminations :

8

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.7W Tc

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4040pF @ 25V

Series :

DeepGATE™, STripFET™ VI

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2.7W

Qualification Status :

Not Qualified

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

STS30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE