STS1NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Pin Count :

8

Drain to Source Breakdown Voltage :

600V

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 10V

Mount :

Surface Mount

Turn On Delay Time :

5.5 ns

Base Part Number :

STS1

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Turn-Off Delay Time :

13 ns

Fall Time (Typ) :

28 ns

Series :

SuperMESH™

Number of Elements :

1

Continuous Drain Current (ID) :

250mA

Current Rating :

250mA

Pulsed Drain Current-Max (IDM) :

1A

Voltage - Rated DC :

600V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2W Tc

Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rise Time :

5ns

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

94pF @ 25V

JESD-609 Code :

e4

Rds On (Max) @ Id, Vgs :

15 Ω @ 400mA, 10V

Current - Continuous Drain (Id) @ 25°C :

250mA Tc

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.25A

Number of Terminations :

8