STS19N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 9.5A, 10V

Drain-source On Resistance-Max :

0.0075Ohm

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 15V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

76A

Base Part Number :

STS19

Turn On Delay Time :

9.5 ns

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

19A

Terminal Form :

Gull wing

Turn-Off Delay Time :

37 ns

Power Dissipation-Max :

2.7W Ta

DS Breakdown Voltage-Min :

30V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Rise Time :

30ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 25V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Series :

DeepGATE™, STripFET™ VI

Additional Feature :

ULTRA-LOW RESISTANCE

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)