STS15N4LLF5
- Mfr.Part #
- STS15N4LLF5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 15A 8SO
- Stock
- 6,085
- In Stock :
- 6,085
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 1090 mJ
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±16V
- Base Part Number :
- STS15
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Power Dissipation-Max :
- 3W Tc
- Turn-Off Delay Time :
- 37 ns
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 63.6A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 8
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Dual
- Pin Count :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- STripFET™ V
- Fall Time (Typ) :
- 5.2 ns
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Resistance :
- 7.6mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Power Dissipation :
- 3W
- Packaging :
- Cut Tape (CT)
- Continuous Drain Current (ID) :
- 15A
- Gate Charge (Qg) (Max) @ Vgs :
- 12.9nC @ 4.5V
- JESD-609 Code :
- e4
- Rds On (Max) @ Id, Vgs :
- 6.7m Ω @ 7.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1570pF @ 25V
- Rise Time :
- 42ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Datasheets
- STS15N4LLF5

N-Channel Cut Tape (CT) 6.7m Ω @ 7.5A, 10V ±16V 1570pF @ 25V 12.9nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS15N4LLF5 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1090 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1570pF @ 25V.This device has a continuous drain current (ID) of [15A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 37 ns.A maximum pulsed drain current of 63.6A is the maximum peak drain current rated for this device.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
STS15N4LLF5 Features
the avalanche energy rating (Eas) is 1090 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 63.6A.
STS15N4LLF5 Applications
There are a lot of STMicroelectronics
STS15N4LLF5 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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