STS15N4LLF3
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- Mfr.Part #
- STS15N4LLF3
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 15A 8SO
- Stock
- 63,473
- In Stock ：
- 63,473
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2.7W Tc
- REACH SVHC :
- No SVHC
- Pin Count :
- 8
- Rise Time :
- 25ns
- Number of Pins :
- 8
- Resistance :
- 5mOhm
- Vgs (Max) :
- ±16V
- Base Part Number :
- STS15
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 60A
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 7.5A
- Series :
- STripFET™
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation :
- 2.7W
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 62 ns
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Drain to Source Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 7.5A, 10V
- Gate to Source Voltage (Vgs) :
- 16V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Threshold Voltage :
- 1V
- Number of Terminations :
- 8
- Fall Time (Typ) :
- 9 ns
- JESD-609 Code :
- e4
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Datasheets
- STS15N4LLF3
N-Channel Tape & Reel (TR) 5m Ω @ 7.5A, 10V ±16V 2530pF @ 25V 28nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS15N4LLF3 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2530pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.5A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
STS15N4LLF3 Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 60A.
a threshold voltage of 1V
STS15N4LLF3 Applications
There are a lot of STMicroelectronics
STS15N4LLF3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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