STS13N3LLH5

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Mfr.Part #
STS13N3LLH5
Manufacturer
STMicroelectronics
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 13A 8SO
Stock
43,541
In Stock :
43,541

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
1V @ 250μA
ECCN Code :
EAR99
Resistance :
6.6mOhm
Number of Terminations :
8
Power Dissipation-Max :
2.7W Tc
Rds On (Max) @ Id, Vgs :
6.6m Ω @ 6.5A, 10V
Vgs (Max) :
+22V, -20V
Fall Time (Typ) :
4.5 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
22.7 ns
Series :
STripFET™ V
Packaging :
Cut Tape (CT)
Number of Elements :
1
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Power Dissipation :
2.7W
Operating Temperature :
-55°C~150°C TJ
Pin Count :
8
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Turn On Delay Time :
9.3 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
ULTRA-LOW RESISTANCE
Radiation Hardening :
No
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Continuous Drain Current (ID) :
13A
Rise Time :
14.5ns
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Number of Pins :
8
RoHS Status :
ROHS3 Compliant
Base Part Number :
STS13
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
52A
Terminal Position :
Dual
Gate to Source Voltage (Vgs) :
22V
Lead Free :
Lead Free
Mount :
Surface Mount
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Drain to Source Breakdown Voltage :
30V
Datasheets
STS13N3LLH5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STS13N3LLH5 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Base Part Number:STS13, Package / Case:8-SOIC (0.154, 3.90mm Width), STS13N3LLH5 pinout, STS13N3LLH5 datasheet PDF, STS13N3LLH5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STS13N3LLH5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STS13N3LLH5


N-Channel Cut Tape (CT) 6.6m Ω @ 6.5A, 10V +22V, -20V 1500pF @ 25V 12nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)

STS13N3LLH5 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 22.7 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 52A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 22VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

STS13N3LLH5 Features


a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22.7 ns
based on its rated peak drain current 52A.


STS13N3LLH5 Applications


There are a lot of STMicroelectronics
STS13N3LLH5 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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