STS13N3LLH5
- Mfr.Part #
- STS13N3LLH5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A 8SO
- Stock
- 43,541
- In Stock :
- 43,541
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- ECCN Code :
- EAR99
- Resistance :
- 6.6mOhm
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 2.7W Tc
- Rds On (Max) @ Id, Vgs :
- 6.6m Ω @ 6.5A, 10V
- Vgs (Max) :
- +22V, -20V
- Fall Time (Typ) :
- 4.5 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 22.7 ns
- Series :
- STripFET™ V
- Packaging :
- Cut Tape (CT)
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2.7W
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 9.3 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Continuous Drain Current (ID) :
- 13A
- Rise Time :
- 14.5ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STS13
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 52A
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 22V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- 30V
- Datasheets
- STS13N3LLH5

N-Channel Cut Tape (CT) 6.6m Ω @ 6.5A, 10V +22V, -20V 1500pF @ 25V 12nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS13N3LLH5 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 22.7 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 52A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 22VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
STS13N3LLH5 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22.7 ns
based on its rated peak drain current 52A.
STS13N3LLH5 Applications
There are a lot of STMicroelectronics
STS13N3LLH5 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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