STL8P2UH7
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- Mfr.Part #
- STL8P2UH7
- Manufacturer
- STMicroelectronics
- Package / Case
- 6-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 8A POWERFLAT
- Stock
- 7,904
- In Stock ：
- 7,904
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 4.5V
- Vgs (Max) :
- ±8V
- Base Part Number :
- STL8
- Number of Pins :
- 6
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 84.5 ns
- Rds On (Max) @ Id, Vgs :
- 22.5m Ω @ 4A, 4.5V
- Rise Time :
- 30.5ns
- Gate to Source Voltage (Vgs) :
- 8V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- 6-PowerWDFN
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 128 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.4W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 12.5 ns
- Operating Temperature :
- 150°C TJ
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Packaging :
- Cut Tape (CT)
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- ECCN Code :
- EAR99
- Power Dissipation :
- 2.4W
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 20V
- Continuous Drain Current (ID) :
- 8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2390pF @ 16V
- Series :
- DeepGATE™, STripFET™ VII
- Number of Channels :
- 1
- Datasheets
- STL8P2UH7
P-Channel Cut Tape (CT) 22.5m Ω @ 4A, 4.5V ±8V 2390pF @ 16V 22nC @ 4.5V 6-PowerWDFN
STL8P2UH7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2390pF @ 16V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 128 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4.5V volts (1.5V 4.5V).
STL8P2UH7 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 128 ns
STL8P2UH7 Applications
There are a lot of STMicroelectronics
STL8P2UH7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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