STL8N65M5
- Mfr.Part #
- STL8N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 14-PowerVQFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A POWERFLAT
- Stock
- 30,518
- In Stock :
- 30,518
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 5.6A
- Height :
- 950μm
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Ta 7A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Width :
- 5.1mm
- Vgs (Max) :
- ±25V
- Rise Time :
- 14ns
- Base Part Number :
- STL8
- Input Capacitance (Ciss) (Max) @ Vds :
- 690pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 600mOhm
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Power Dissipation :
- 70W
- Number of Pins :
- 14
- Power Dissipation-Max :
- 2.5W Ta 70W Tc
- Series :
- MDmesh™ V
- Gate to Source Voltage (Vgs) :
- 25V
- Fall Time (Typ) :
- 11 ns
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pin Count :
- 14
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 650V
- Length :
- 5.1mm
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 3.5A, 10V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 5
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 7A
- Turn-Off Delay Time :
- 20 ns
- Turn On Delay Time :
- 50 ns
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- S-XQCC-N5
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Terminal Position :
- QUAD
- Package / Case :
- 14-PowerVQFN
- Datasheets
- STL8N65M5

N-Channel Tape & Reel (TR) 600m Ω @ 3.5A, 10V ±25V 690pF @ 100V 15nC @ 10V 14-PowerVQFN
STL8N65M5 Overview
A device's maximal input capacitance is 690pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 5.6A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
STL8N65M5 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 5.6A.
STL8N65M5 Applications
There are a lot of STMicroelectronics
STL8N65M5 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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