STL85N6F3
- Mfr.Part #
- STL85N6F3
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 85A POWERFLAT
- Stock
- 1,404
- In Stock :
- 1,404
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 76A
- Number of Elements :
- 1
- Power Dissipation-Max :
- 80W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 14.3ns
- Terminal Position :
- Dual
- Package / Case :
- 8-PowerVDFN
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 5
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 19A
- Additional Feature :
- AVALANCHE ENERGY RATED
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 6.5mOhm
- Power Dissipation :
- 4W
- Turn-Off Delay Time :
- 38.4 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PDSO-N5
- Input Capacitance (Ciss) (Max) @ Vds :
- 3400pF @ 25V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- STL85
- Turn On Delay Time :
- 21.8 ns
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 7.1 ns
- Series :
- STripFET™
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 8.5A, 10V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Pin Count :
- 8
- Vgs (Max) :
- ±20V
- Datasheets
- STL85N6F3

N-Channel Tape & Reel (TR) 5.7m Ω @ 8.5A, 10V ±20V 3400pF @ 25V 60nC @ 10V 8-PowerVDFN
STL85N6F3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3400pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 19A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38.4 ns.Peak drain current is 76A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STL85N6F3 Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 38.4 ns
based on its rated peak drain current 76A.
STL85N6F3 Applications
There are a lot of STMicroelectronics
STL85N6F3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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