STL8N10LF3
- Mfr.Part #
- STL8N10LF3
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N CH 100V 20A PWRFLT5X6
- Stock
- 3,000
- In Stock :
- 3,000
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerVDFN
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 4.3W Ta 70W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 5
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PDSO-F5
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 970pF @ 25V
- Fall Time (Typ) :
- 5.2 ns
- Continuous Drain Current (ID) :
- 20A
- Additional Feature :
- AVALANCHE RATED
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 175°C
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 20.5nC @ 10V
- Turn On Delay Time :
- 8.7 ns
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 70W
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Height :
- 1mm
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Rise Time :
- 9.6ns
- Series :
- Automotive, AEC-Q101, STripFET™ III
- Base Part Number :
- STL8
- Terminal Form :
- Flat
- Drain-source On Resistance-Max :
- 0.05Ohm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 100V
- Turn-Off Delay Time :
- 50.6 ns
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Datasheets
- STL8N10LF3

N-Channel Tape & Reel (TR) 35m Ω @ 4A, 10V ±20V 970pF @ 25V 20.5nC @ 10V 8-PowerVDFN
STL8N10LF3 Description
The device is an N-channel power MOSFET developed by STripFET F3 technology. It aims to minimize on-resistance and gate charge to provide excellent switching performance.
STL8N10LF3
Features
· AEC-Q101 qualified
· Logic level VGS(th)
· 175 °C maximum junction temperature
· 100% avalanche rated
· Wettable flank package
STL8N10LF3 Applications
· Switching applications
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