STL80N4LLF3
- Mfr.Part #
- STL80N4LLF3
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A POWERFLAT
- Stock
- 13,433
- In Stock :
- 13,433
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Vgs (Max) :
- ±16V
- Dual Supply Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 225
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Number of Elements :
- 1
- Termination :
- SMD/SMT
- Package / Case :
- 8-PowerVDFN
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Power Dissipation-Max :
- 80W Tc
- Gate to Source Voltage (Vgs) :
- 16V
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.007Ohm
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 62 ns
- Terminal Finish :
- MATTE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Threshold Voltage :
- 1V
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 10A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 9 ns
- Mounting Type :
- Surface Mount
- Base Part Number :
- STL80
- Nominal Vgs :
- 1 V
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 10A
- Terminal Form :
- NO LEAD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2530pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 20A
- Power Dissipation :
- 80W
- Drain to Source Breakdown Voltage :
- 40V
- Pin Count :
- 8
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Series :
- STripFET™
- Rise Time :
- 25ns
- Datasheets
- STL80N4LLF3

N-Channel Tape & Reel (TR) 5m Ω @ 10A, 10V ±16V 2530pF @ 25V 28nC @ 4.5V 8-PowerVDFN
STL80N4LLF3 Overview
A device's maximum input capacitance is 2530pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 20A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 62 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
STL80N4LLF3 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 62 ns
a threshold voltage of 1V
STL80N4LLF3 Applications
There are a lot of STMicroelectronics
STL80N4LLF3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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