STL26NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

185m Ω @ 10A, 10V

Number of Pins :

5

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

13 ns

REACH SVHC :

No SVHC

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Elements :

1

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Threshold Voltage :

4V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta 19A Tc

Power Dissipation-Max :

125mW Ta 3W Tc

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

19A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Base Part Number :

STL26

ECCN Code :

EAR99

Power Dissipation :

3W

Fall Time (Typ) :

50 ns

Series :

MDmesh™ II

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

400 mJ

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Terminal Position :

Dual

Pin Count :

5

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

8-PowerVDFN

Factory Lead Time :

12 Weeks

Drain Current-Max (Abs) (ID) :

2.7A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Rise Time :

25ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Surface Mount

Number of Terminations :

5

Turn-Off Delay Time :

85 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Resistance :

185mOhm

Operating Temperature :

150°C TJ