STL20N6F7
- Mfr.Part #
- STL20N6F7
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A POWERFLAT
- Stock
- 8,714
- In Stock :
- 8,714
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 5.4m Ω @ 10A, 10V
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Flat
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 25V
- Series :
- STripFET™ F7
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerVDFN
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Continuous Drain Current (ID) :
- 100A
- DS Breakdown Voltage-Min :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Cut Tape (CT)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Reach Compliance Code :
- Compliant
- Base Part Number :
- STL20
- Drain to Source Voltage (Vdss) :
- 60V
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.0054Ohm
- Power Dissipation-Max :
- 3W Ta 78W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Number of Pins :
- 8
- Number of Terminations :
- 5
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- S-PDSO-F5
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Datasheets
- STL20N6F7

N-Channel Cut Tape (CT) 5.4m Ω @ 10A, 10V ±20V 1600pF @ 25V 25nC @ 10V 60V 8-PowerVDFN
STL20N6F7 Description
STL20N6F7 is a 60v N-channel STripFET? F7 Power MOSFET. This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STL20N6F7 Features
-
Among the lowest RDS(on) on the market
-
An excellent figure of merit (FoM)
-
Low Crss/Ciss ratio for EMI immunity
-
High avalanche ruggedness
STL20N6F7 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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