STL23NM50N
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- Mfr.Part #
- STL23NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.8A PWRFLT 8X8
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±25V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerVDFN
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 71 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 3W Ta 125W Tc
- Turn On Delay Time :
- 6.6 ns
- Element Configuration :
- Single
- Fall Time (Typ) :
- 29 ns
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330pF @ 50V
- Rise Time :
- 19ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 550V
- Series :
- MDmesh™ II
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 7A, 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Drain to Source Voltage (Vdss) :
- 500V
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 14A
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Ta 14A Tc
- Power Dissipation :
- 3W
- Base Part Number :
- STL23
- Datasheets
- STL23NM50N
N-Channel Tape & Reel (TR) 210m Ω @ 7A, 10V ±25V 1330pF @ 50V 45nC @ 10V 500V 8-PowerVDFN
STL23NM50N Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1330pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 14A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 550V, and this device has a drainage-to-source breakdown voltage of 550VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 71 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.6 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STL23NM50N Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 71 ns
a 500V drain to source voltage (Vdss)
STL23NM50N Applications
There are a lot of STMicroelectronics
STL23NM50N applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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