STL21N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Additional Feature :

ULTRA-LOW RESISTANCE

JESD-30 Code :

S-PDSO-N5

Number of Terminations :

5

Drain to Source Breakdown Voltage :

650V

Package / Case :

8-PowerVDFN

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation :

3W

JESD-609 Code :

e3

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Pin Count :

8

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Number of Pins :

4

FET Type :

N-Channel

Number of Elements :

1

Continuous Drain Current (ID) :

17A

Transistor Application :

SWITCHING

Rise Time :

10ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Element Material :

SILICON

Terminal Position :

Dual

Turn-Off Delay Time :

37 ns

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 100V

Drain Current-Max (Abs) (ID) :

2.7A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

179m Ω @ 8.5A, 10V

Fall Time (Typ) :

12 ns

Series :

MDmesh™ V

Power Dissipation-Max :

3W Ta 125W Tc

Terminal Finish :

Matte Tin (Sn) - annealed

Factory Lead Time :

12 Weeks

Base Part Number :

STL21

Drive Voltage (Max Rds On,Min Rds On) :

10V