STL20NF06LAG
- Mfr.Part #
- STL20NF06LAG
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 20A POWERFLAT
- Stock
- 47,693
- In Stock :
- 47,693
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Base Part Number :
- STL20
- Drain to Source Voltage (Vdss) :
- 60V
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 4A, 10V
- Drain Current-Max (Abs) (ID) :
- 20A
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-F5
- Surface Mount :
- yes
- Package / Case :
- 8-PowerVDFN
- Pulsed Drain Current-Max (IDM) :
- 80A
- Drain-source On Resistance-Max :
- 0.05Ohm
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 22.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 4.8W Ta 75W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 60V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Series :
- Automotive, AEC-Q101, STripFET™ II
- Datasheets
- STL20NF06LAG

N-Channel Tape & Reel (TR) 40m Ω @ 4A, 10V ±20V 670pF @ 25V 22.5nC @ 10V 60V 8-PowerVDFN
STL20NF06LAG Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 210 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 670pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 80A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
STL20NF06LAG Features
the avalanche energy rating (Eas) is 210 mJ
based on its rated peak drain current 80A.
a 60V drain to source voltage (Vdss)
STL20NF06LAG Applications
There are a lot of STMicroelectronics
STL20NF06LAG applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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