STL210N4F7AG
- Mfr.Part #
- STL210N4F7AG
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A POWERFLAT
- Stock
- 11,926
- In Stock :
- 11,926
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 150W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Terminations :
- 5
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 40V
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 16A, 10V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 480A
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Drain-source On Resistance-Max :
- 0.0016Ohm
- DS Breakdown Voltage-Min :
- 40V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-F5
- Package / Case :
- 8-PowerVDFN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 120A
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Series :
- Automotive, AEC-Q101, STripFET™ F7
- Terminal Form :
- Flat
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 24 Weeks
- Mounting Type :
- Surface Mount
- Base Part Number :
- STL210
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- STL210N4F7AG

N-Channel Tape & Reel (TR) 1.6m Ω @ 16A, 10V ±20V 3600pF @ 25V 43nC @ 10V 40V 8-PowerVDFN
STL210N4F7AG Description
STL210N4F7AG is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 40V. With an improved trench gate structure and STripFETTM F7 technology, this N-channel Power MOSFET has an extremely low onstate resistance and lower internal capacitance and gate charge for quicker and more effective switching.
STL210N4F7AG Features
-
Designed for automotive applications and AEC-Q101 qualified
-
Among the lowest RDS(on) on the market
-
Excellent figure of merit (FoM)
-
Low Crss/Ciss ratio for EMI immunity
-
High avalanche ruggedness
-
Wettable flank package
STL210N4F7AG Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
-
Switching applications
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