STL25N15F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Series :

DeepGATE™, STripFET™

Additional Feature :

AVALANCE RATED

Rds On (Max) @ Id, Vgs :

63m Ω @ 3A, 10V

Turn On Delay Time :

13.5 ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

125 mJ

JESD-30 Code :

R-PDSO-N5

Drain-source On Resistance-Max :

0.063Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Turn-Off Delay Time :

39.7 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2710pF @ 25V

Continuous Drain Current (ID) :

25A

Drain to Source Voltage (Vdss) :

150V

Terminal Position :

Dual

Base Part Number :

STL25

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

150V

Lead Free :

Lead Free

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

6A

Fall Time (Typ) :

11.4 ns

Current - Continuous Drain (Id) @ 25°C :

25A Tc

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

80W Tc

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerVDFN

Pin Count :

8

Terminal Finish :

Matte Tin (Sn) - annealed

Mounting Type :

Surface Mount

Rise Time :

5.1ns

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

24A

Number of Pins :

8

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Packaging :

Cut Tape (CT)