STL23NM60ND
- Mfr.Part #
- STL23NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 19.5A POWERFLAT
- Stock
- 62,636
- In Stock :
- 62,636
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Base Part Number :
- STL23
- Current - Continuous Drain (Id) @ 25°C :
- 19.5A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 4V
- Pulsed Drain Current-Max (IDM) :
- 78A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 45ns
- Operating Temperature :
- 150°C TJ
- Continuous Drain Current (ID) :
- 19.5A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 40 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Number of Pins :
- 5
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Pin Count :
- 5
- Drain to Source Breakdown Voltage :
- 600V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 3W Ta 150W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation :
- 3W
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 10A, 10V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 50V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 25 ns
- Package / Case :
- 8-PowerVDFN
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Mounting Type :
- Surface Mount
- Series :
- FDmesh™ II
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Gate to Source Voltage (Vgs) :
- 25V
- FET Type :
- N-Channel
- Number of Terminations :
- 4
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±25V
- JESD-30 Code :
- S-XDSO-N4
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 90 ns
- Packaging :
- Tape and Reel (TR)
- Datasheets
- STL23NM60ND

N-Channel Tape & Reel (TR) 180m Ω @ 10A, 10V ±25V 2050pF @ 50V 70nC @ 10V 8-PowerVDFN
Description
The STL23NM60ND is an N-channel 600 V, 0.175 ? typ., 19.5 A, FDmesh? II Power MOSFET (with fast diode) in PowerFLAT? 8x8 HV package. This fast-recovery body diode FDmesh? II Power MOSFET was created using MDmesh? II technology. This device has an improved switching performance and a reduced on-resistance because of the use of a novel strip layout vertical structure. It is perfect for ZVS phase-shift converters and bridge topologies.
Features
-
100% avalanche tested
-
High dv/dt ruggedness
-
Low gate charge and input capacitance
-
Low on-resistance
-
Fast-recovery body diode
Applications
-
Switching applications
-
Switch, buck and synchronous rectification
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
-
Switch Mode Power Supplies (SMPS)
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