STI4N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.9A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 50V

Power Dissipation-Max :

70W Tc

Pin Count :

3

Number of Elements :

1

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3.8A

Factory Lead Time :

12 Weeks

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STI4N

Fall Time (Typ) :

19 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±30V

Packaging :

Tube

Mounting Type :

Through Hole

Length :

10.4mm

Rise Time :

9ns

Height :

10.75mm

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

ECCN Code :

EAR99

Mount :

Through Hole

Turn On Delay Time :

10 ns

Width :

4.6mm

Nominal Vgs :

3.75 V

Threshold Voltage :

3.75V

Radiation Hardening :

No

Series :

SuperMESH3™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

620V

Weight :

1.437803g

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Turn-Off Delay Time :

29 ns