STI47N60DM6AG

Manufacturer :

STMicroelectronics

Product Category :

Unclassified

Avalanche Energy Rating (Eas) :

700 mJ

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

137A

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

Base Part Number :

STI47N

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

36A

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

600V

Operating Temperature (Min) :

-55°C

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.08Ohm

Surface Mount :

No

Power Dissipation-Max (Abs) :

250W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Operating Temperature (Max) :

150°C

Reference Standard :

AEC-Q101

Terminal Position :

Single