STI40N65M2
- Mfr.Part #
- STI40N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 32A I2PAK
- Stock
- 5,733
- In Stock :
- 5,733
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 96.5 ns
- FET Type :
- N-Channel
- Series :
- MDmesh™ M2
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Height :
- 9.35mm
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 16A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 25V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 650V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Width :
- 4.6mm
- Length :
- 10.4mm
- Base Part Number :
- STI40N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 56.5nC @ 10V
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 250W Tc
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2355pF @ 100V
- Vgs (Max) :
- ±25V
- Continuous Drain Current (ID) :
- 32A
- Datasheets
- STI40N65M2

N-Channel Tube 99m Ω @ 16A, 10V ±25V 2355pF @ 100V 56.5nC @ 10V 650V TO-262-3 Long Leads, I2Pak, TO-262AA
STI40N65M2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2355pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 96.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STI40N65M2 Features
a continuous drain current (ID) of 32A
the turn-off delay time is 96.5 ns
a 650V drain to source voltage (Vdss)
STI40N65M2 Applications
There are a lot of STMicroelectronics
STI40N65M2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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