STI42N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

13 ns

Height :

9.35mm

Number of Elements :

1

Nominal Vgs :

4 V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Base Part Number :

STI42N

Mount :

Through Hole

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

33A

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Width :

4.6mm

Rds On (Max) @ Id, Vgs :

79m Ω @ 16.5A, 10V

Turn-Off Delay Time :

65 ns

ECCN Code :

EAR99

Element Configuration :

Single

Threshold Voltage :

4V

Drain-source On Resistance-Max :

0.079Ohm

Turn On Delay Time :

61 ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 100V

Drain to Source Breakdown Voltage :

650V

Transistor Element Material :

SILICON

Power Dissipation :

190W

Avalanche Energy Rating (Eas) :

950 mJ

Power Dissipation-Max :

190W Tc

Series :

MDmesh™ V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Rise Time :

24ns

Number of Pins :

3

Packaging :

Tube

Radiation Hardening :

No

Transistor Application :

SWITCHING

Length :

10.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

JESD-609 Code :

e3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA