STI45N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

17ns

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Continuous Drain Current (ID) :

45A

Element Configuration :

Single

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Length :

10.4mm

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

60W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 50V

Turn On Delay Time :

15 ns

Width :

4.6mm

Fall Time (Typ) :

8 ns

Height :

9.35mm

Drain to Source Breakdown Voltage :

100V

Series :

DeepGATE™, STripFET™ VII

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Number of Pins :

3

Mount :

Through Hole

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Turn-Off Delay Time :

24 ns

Packaging :

Tube

Base Part Number :

STI45N

Rds On (Max) @ Id, Vgs :

18m Ω @ 22.5A, 10V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Weight :

2.084002g