STF3N80K5
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- Mfr.Part #
- STF3N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2.5A TO220FP
- Stock
- 24,346
- In Stock ：
- 24,346
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 8.5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 10V
- Number of Elements :
- 1
- Series :
- SuperMESH5™
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 130pF @ 100V
- Drain to Source Breakdown Voltage :
- 800V
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.4mm
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Rise Time :
- 7.5ns
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 329.988449mg
- Fall Time (Typ) :
- 25 ns
- Number of Channels :
- 1
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Turn-Off Delay Time :
- 20.5 ns
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 2.5A
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 1A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 17 Weeks
- Height :
- 16.4mm
- Power Dissipation-Max :
- 20W Tc
- Base Part Number :
- STF3N
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3 Full Pack
- Packaging :
- Tube
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- Width :
- 4.6mm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STF3N80K5
N-Channel Tube 3.5 Ω @ 1A, 10V 130pF @ 100V 9.5nC @ 10V TO-220-3 Full Pack
STF3N80K5 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 65 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 130pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20.5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STF3N80K5 Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 20.5 ns
STF3N80K5 Applications
There are a lot of STMicroelectronics
STF3N80K5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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