STF30N10F7
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- Mfr.Part #
- STF30N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 24A TO220FP
- Stock
- 19,035
- In Stock ：
- 19,035
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 16.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270pF @ 50V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 16A, 10V
- Series :
- DeepGATE™, STripFET™ VII
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Number of Channels :
- 1
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 10.4mm
- Continuous Drain Current (ID) :
- 24A
- Fall Time (Typ) :
- 5.6 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 37 Weeks
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 22 ns
- Packaging :
- Tube
- Number of Pins :
- 3
- Height :
- 4.6mm
- Package / Case :
- TO-220-3 Full Pack
- Turn On Delay Time :
- 12 ns
- Base Part Number :
- STF30N
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mount :
- Through Hole
- Power Dissipation-Max :
- 25W Tc
- Rise Time :
- 17.5ns
- Weight :
- 329.988449mg
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Datasheets
- STF30N10F7
N-Channel Tube 24m Ω @ 16A, 10V 1270pF @ 50V 19nC @ 10V TO-220-3 Full Pack
STF30N10F7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1270pF @ 50V.This device has a continuous drain current (ID) of [24A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 22 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STF30N10F7 Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 22 ns
STF30N10F7 Applications
There are a lot of STMicroelectronics
STF30N10F7 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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