STF30N10F7
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- Mfr.Part #
- STF30N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 24A TO220FP
- Stock
- 19,035
- In Stock ：
- 19,035
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 100V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- DeepGATE™, STripFET™ VII
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270pF @ 50V
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 16A, 10V
- Height :
- 4.6mm
- ECCN Code :
- EAR99
- Width :
- 16.4mm
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 22 ns
- Power Dissipation-Max :
- 25W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Number of Pins :
- 3
- Factory Lead Time :
- 37 Weeks
- Turn On Delay Time :
- 12 ns
- Packaging :
- Tube
- Rise Time :
- 17.5ns
- Base Part Number :
- STF30N
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Package / Case :
- TO-220-3 Full Pack
- Length :
- 10.4mm
- Continuous Drain Current (ID) :
- 24A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 5.6 ns
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Weight :
- 329.988449mg
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- STF30N10F7
N-Channel Tube 24m Ω @ 16A, 10V 1270pF @ 50V 19nC @ 10V TO-220-3 Full Pack
STF30N10F7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1270pF @ 50V.This device has a continuous drain current (ID) of [24A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 22 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STF30N10F7 Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 22 ns
STF30N10F7 Applications
There are a lot of STMicroelectronics
STF30N10F7 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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