STF30N65M5
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- Mfr.Part #
- STF30N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22A TO220FP
- Stock
- 5,664
- In Stock ：
- 5,664
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 139mOhm
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 88A
- Transistor Application :
- SWITCHING
- Height :
- 16.4mm
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE ENERGY RATED
- Gate to Source Voltage (Vgs) :
- 25V
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 139m Ω @ 11A, 10V
- Turn-Off Delay Time :
- 50 ns
- Fall Time (Typ) :
- 10 ns
- Element Configuration :
- Single
- Power Dissipation-Max :
- 30W Tc
- Width :
- 4.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rise Time :
- 8ns
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Drain to Source Breakdown Voltage :
- 650V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STF30N
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 30W
- Pin Count :
- 3
- Number of Pins :
- 3
- Vgs (Max) :
- ±25V
- Package / Case :
- TO-220-3 Full Pack
- Turn On Delay Time :
- 50 ns
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Continuous Drain Current (ID) :
- 22A
- Case Connection :
- Isolated
- Series :
- MDmesh™ V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2880pF @ 100V
- Length :
- 10.4mm
- Datasheets
- STF30N65M5
N-Channel Tube 139m Ω @ 11A, 10V ±25V 2880pF @ 100V 64nC @ 10V TO-220-3 Full Pack
STF30N65M5 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2880pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [50 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 88A.A turn-on delay time of 50 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STF30N65M5 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 88A.
STF30N65M5 Applications
There are a lot of STMicroelectronics
STF30N65M5 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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