STF30NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

130m Ω @ 12.5A, 10V

Rise Time :

50ns

Drain to Source Breakdown Voltage :

600V

Series :

FDmesh™ II

Case Connection :

Isolated

Power Dissipation :

40W

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

900 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain-source On Resistance-Max :

0.385Ohm

Qualification Status :

Not Qualified

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

40W Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 50V

FET Type :

N-Channel

Turn-Off Delay Time :

110 ns

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Element Configuration :

Single

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Base Part Number :

STF30N

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

75 ns

Pulsed Drain Current-Max (IDM) :

100A

Number of Elements :

1

Continuous Drain Current (ID) :

25A

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Vgs (Max) :

±30V