STF31N65M5
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- Mfr.Part #
- STF31N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22A TO220FP
- Stock
- 10,543
- In Stock ：
- 10,543
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.6mm
- Turn-Off Delay Time :
- 46 ns
- Power Dissipation :
- 30W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 816pF @ 100V
- Rds On (Max) @ Id, Vgs :
- 148m Ω @ 11A, 10V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-220-3 Full Pack
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 30W Tc
- Length :
- 10.4mm
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Resistance :
- 148mOhm
- Turn On Delay Time :
- 46 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Continuous Drain Current (ID) :
- 22A
- Vgs (Max) :
- ±25V
- FET Type :
- N-Channel
- Series :
- MDmesh™ V
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Drain to Source Breakdown Voltage :
- 650V
- Base Part Number :
- STF31N
- Factory Lead Time :
- 17 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Packaging :
- Tube
- Height :
- 16.4mm
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Datasheets
- STF31N65M5
N-Channel Tube 148m Ω @ 11A, 10V ±25V 816pF @ 100V 45nC @ 10V TO-220-3 Full Pack
STF31N65M5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 816pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 46 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 46 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STF31N65M5 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 46 ns
STF31N65M5 Applications
There are a lot of STMicroelectronics
STF31N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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