STF30NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Pins :

3

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Mount :

Through Hole

ECCN Code :

EAR99

Mounting Type :

Through Hole

Rise Time :

20ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2740pF @ 50V

Continuous Drain Current (ID) :

27A

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Qualification Status :

Not Qualified

FET Type :

N-Channel

Vgs (Max) :

±25V

Base Part Number :

STF30N

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Power Dissipation :

40W

Pin Count :

3

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

40W Tc

Element Configuration :

Single

Turn-Off Delay Time :

115 ns

Rds On (Max) @ Id, Vgs :

115m Ω @ 13.5A, 10V

Case Connection :

Isolated

Series :

MDmesh™ II

Avalanche Energy Rating (Eas) :

900 mJ

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

60 ns

Drain to Source Breakdown Voltage :

500V