STF3LN62K3
- Mfr.Part #
- STF3LN62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 2.5A TO220FP
- Stock
- 7,163
- In Stock :
- 7,163
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 7ns
- Continuous Drain Current (ID) :
- 2.5A
- Number of Terminations :
- 3
- Threshold Voltage :
- 3.75V
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Tc
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 1.25A, 10V
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 386pF @ 50V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Series :
- SuperMESH3™
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.4mm
- Resistance :
- 3Ohm
- Fall Time (Typ) :
- 27 ns
- Turn-Off Delay Time :
- 30 ns
- Height :
- 16.4mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 20W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 4.6mm
- Drain to Source Breakdown Voltage :
- 620V
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Base Part Number :
- STF3LN
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 9 ns
- Power Dissipation :
- 20W
- Lead Free :
- Lead Free
- Case Connection :
- Isolated
- Datasheets
- STF3LN62K3

N-Channel Tube 3 Ω @ 1.25A, 10V ±30V 386pF @ 50V 17nC @ 10V TO-220-3 Full Pack
STF3LN62K3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 90 mJ.A device's maximal input capacitance is 386pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 620V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STF3LN62K3 Features
the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 30 ns
a threshold voltage of 3.75V
STF3LN62K3 Applications
There are a lot of STMicroelectronics
STF3LN62K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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