STF38N65M5

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Mfr.Part #
STF38N65M5
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 650V 30A TO220FP
Stock
1,857
In Stock :
1,857

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 100V
Rise Time :
9ns
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Fall Time (Typ) :
9 ns
Turn On Delay Time :
66 ns
Base Part Number :
STF38N
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Length :
10.4mm
Package / Case :
TO-220-3 Full Pack
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
25V
Element Configuration :
Single
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Resistance :
95mOhm
Rds On (Max) @ Id, Vgs :
95m Ω @ 15A, 10V
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±25V
ECCN Code :
EAR99
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
650V
Width :
4.6mm
Terminal Finish :
MATTE TIN
Gate Charge (Qg) (Max) @ Vgs :
71nC @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Number of Pins :
3
Lead Free :
Lead Free
Packaging :
Tube
Case Connection :
Isolated
Power Dissipation :
35W
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
16.4mm
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Terminations :
3
FET Type :
N-Channel
Turn-Off Delay Time :
66 ns
Avalanche Energy Rating (Eas) :
660 mJ
Continuous Drain Current (ID) :
30A
Power Dissipation-Max :
35W Tc
Mounting Type :
Through Hole
Factory Lead Time :
17 Weeks
Additional Feature :
ULTRA LOW RESISTANCE
Series :
MDmesh™ V
Datasheets
STF38N65M5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF38N65M5 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STF38N, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, STF38N65M5 pinout, STF38N65M5 datasheet PDF, STF38N65M5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF38N65M5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF38N65M5


N-Channel Tube 95m Ω @ 15A, 10V ±25V 3000pF @ 100V 71nC @ 10V TO-220-3 Full Pack

STF38N65M5 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 660 mJ.A device's maximal input capacitance is 3000pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 66 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 66 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).

STF38N65M5 Features


the avalanche energy rating (Eas) is 660 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 66 ns


STF38N65M5 Applications


There are a lot of STMicroelectronics
STF38N65M5 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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