STF35N65M5
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- Mfr.Part #
- STF35N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 27A TO220FP
- Stock
- 4,122
- In Stock ：
- 4,122
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±25V
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Rise Time :
- 12ns
- Base Part Number :
- STF35N
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Height :
- 16.4mm
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 650V
- Gate Charge (Qg) (Max) @ Vgs :
- 83nC @ 10V
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 25V
- Length :
- 10.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3750pF @ 100V
- Mount :
- Through Hole
- Turn On Delay Time :
- 60 ns
- Case Connection :
- Isolated
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 60 ns
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Width :
- 4.6mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Power Dissipation :
- 40W
- Fall Time (Typ) :
- 16 ns
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- Operating Temperature :
- 150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 98mOhm
- Series :
- MDmesh™ V
- Continuous Drain Current (ID) :
- 27A
- Power Dissipation-Max :
- 40W Tc
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 98m Ω @ 13.5A, 10V
- Datasheets
- STF35N65M5
N-Channel Tube 98m Ω @ 13.5A, 10V ±25V 3750pF @ 100V 83nC @ 10V TO-220-3 Full Pack
STF35N65M5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3750pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.As a result of its turn-off delay time, which is 60 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 60 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STF35N65M5 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 60 ns
STF35N65M5 Applications
There are a lot of STMicroelectronics
STF35N65M5 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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