STF34NM60N

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Mfr.Part #
STF34NM60N
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 31.5A TO220FP
Stock
32,632
In Stock :
32,632

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Element Configuration :
Single
Fall Time (Typ) :
61.8 ns
Vgs (Max) :
±25V
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
650V
Current - Continuous Drain (Id) @ 25°C :
29A Tc
Width :
4.6mm
Additional Feature :
ULTRA-LOW RESISTANCE
Operating Temperature :
150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
2785pF @ 50V
Transistor Element Material :
SILICON
Length :
10.4mm
Continuous Drain Current (ID) :
29A
Series :
FDmesh™ II
Rds On (Max) @ Id, Vgs :
110m Ω @ 14.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
80.4nC @ 10V
Threshold Voltage :
4V
Rise Time :
53.4ns
Resistance :
105mOhm
Number of Pins :
3
Mounting Type :
Through Hole
Package / Case :
TO-220-3 Full Pack
Mount :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Height :
16.4mm
Number of Elements :
1
Lead Free :
Lead Free
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
25V
FET Type :
N-Channel
Power Dissipation :
190W
Base Part Number :
STF34N
Turn On Delay Time :
30 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
16 Weeks
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
116A
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Power Dissipation-Max :
40W Tc
Turn-Off Delay Time :
111 ns
Terminal Finish :
Matte Tin (Sn) - annealed
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
JEDEC-95 Code :
TO-220AB
Case Connection :
Isolated
Vgs(th) (Max) @ Id :
5V @ 250μA
Radiation Hardening :
No
Drain to Source Voltage (Vdss) :
600V
Datasheets
STF34NM60N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF34NM60N from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Base Part Number:STF34N, STF34NM60N pinout, STF34NM60N datasheet PDF, STF34NM60N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF34NM60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF34NM60N


N-Channel Tube 110m Ω @ 14.5A, 10V ±25V 2785pF @ 50V 80.4nC @ 10V 600V TO-220-3 Full Pack

STF34NM60ND Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2785pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 29A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 111 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 116A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STF34NM60ND Features


a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 111 ns
based on its rated peak drain current 116A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


STF34NM60ND Applications


There are a lot of STMicroelectronics
STF34NM60ND applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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