STF34N65M5
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- Mfr.Part #
- STF34N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 28A TO220FP
- Stock
- 5,642
- In Stock ：
- 5,642
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- MDmesh™ V
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 110mOhm
- Factory Lead Time :
- 17 Weeks
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 25V
- Power Dissipation :
- 30W
- Base Part Number :
- STF34N
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Pins :
- 3
- Turn On Delay Time :
- 59 ns
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 650V
- Turn-Off Delay Time :
- 59 ns
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 28A
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 14.5A, 10V
- Vgs (Max) :
- ±25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3 Full Pack
- FET Type :
- N-Channel
- Height :
- 16.4mm
- Length :
- 10.4mm
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Width :
- 4.6mm
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Power Dissipation-Max :
- 35W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2590pF @ 100V
- Datasheets
- STF34N65M5
N-Channel Tube 110m Ω @ 14.5A, 10V ±25V 2590pF @ 100V 70nC @ 10V TO-220-3 Full Pack
STF34N65M5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2590pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 28A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 59 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 59 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STF34N65M5 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 59 ns
STF34N65M5 Applications
There are a lot of STMicroelectronics
STF34N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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