STF33N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Mount :

Through Hole

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

650V

Width :

4.6mm

Packaging :

Tube

Base Part Number :

STF33N

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

650V

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

13.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

1790pF @ 100V

Avalanche Energy Rating (Eas) :

780 mJ

Package / Case :

TO-220-3 Full Pack

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation-Max :

34W Tc

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

41.5nC @ 10V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

140m Ω @ 12A, 10V

Number of Pins :

3

Turn-Off Delay Time :

72.5 ns

Height :

16.4mm

Gate to Source Voltage (Vgs) :

25V

Length :

10.4mm

Series :

MDmesh™ M2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.14Ohm

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

24A

Pulsed Drain Current-Max (IDM) :

96A