STF32N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

35W Tc

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

16 ns

Rds On (Max) @ Id, Vgs :

119m Ω @ 12A, 10V

Avalanche Energy Rating (Eas) :

650 mJ

Mounting Type :

Through Hole

Length :

10.4mm

Mount :

Through Hole

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STF32N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Element Configuration :

Single

Number of Elements :

1

Turn-Off Delay Time :

53 ns

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

24A

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

650V

Number of Pins :

3

Rise Time :

12ns

ECCN Code :

EAR99

Additional Feature :

AVALANCHE ENERGY RATED

Resistance :

119mOhm

Packaging :

Tube

Gate to Source Voltage (Vgs) :

25V

Width :

4.6mm

Case Connection :

Isolated

Height :

16.4mm

FET Type :

N-Channel

Turn On Delay Time :

53 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Element Material :

SILICON

Series :

MDmesh™ V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3320pF @ 100V

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Radiation Hardening :

No

Lead Free :

Lead Free

Power Dissipation :

35W

Pulsed Drain Current-Max (IDM) :

96A