STD4NK80Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Radiation Hardening :

No

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pin Count :

3

Drain to Source Breakdown Voltage :

800V

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

STD4N

Continuous Drain Current (ID) :

3A

RoHS Status :

ROHS3 Compliant

Power Dissipation :

80W

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Fall Time (Typ) :

32 ns

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Turn-Off Delay Time :

35 ns

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

3A

Mounting Type :

Through Hole

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 10V

Mount :

Through Hole

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Series :

SuperMESH™

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 25V

Power Dissipation-Max :

80W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 1.5A, 10V

Turn On Delay Time :

13 ns

Vgs(th) (Max) @ Id :

4.5V @ 50μA

JESD-609 Code :

e3