STD45P4LLF6AG

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Mfr.Part #
STD45P4LLF6AG
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 40V 50A DPAK
Stock
15,734
In Stock :
15,734

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Base Part Number :
STD45
Drain to Source Voltage (Vdss) :
40V
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Power Dissipation-Max :
58W Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Cut Tape (CT)
Continuous Drain Current (ID) :
50A
Vgs (Max) :
±18V
Rds On (Max) @ Id, Vgs :
15m Ω @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs :
65.5nC @ 10V
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Series :
Automotive, AEC-Q101, STripFET™ F6
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
P-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3525pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
STD45P4LLF6AG
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD45P4LLF6AG from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STD45, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, STD45P4LLF6AG pinout, STD45P4LLF6AG datasheet PDF, STD45P4LLF6AG amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD45P4LLF6AG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD45P4LLF6AG


P-Channel Cut Tape (CT) 15m Ω @ 25A, 10V ±18V 3525pF @ 25V 65.5nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

STD45P4LLF6AG   Description


  The device is a P-channel power MOSFET developed by STripFET F6 technology and has a new trench gate structure. The resulting power MOSFET shows a very low RDS (conduction) in all packages.


STD45P4LLF6AG   Features


· Designed for automotive applications and

AEC-Q101 qualified

· Very low on-resistance

· Very low gate charge

· High avalanche ruggedness

· Low gate drive power loss


STD45P4LLF6AG  Applications


· Switching applications



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