STD47N10F7AG

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Mfr.Part #
STD47N10F7AG
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 45A DPAK
Stock
6,497
In Stock :
6,497

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Base Part Number :
STD47
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1640pF @ 50V
FET Type :
N-Channel
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C :
45A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
Automotive, AEC-Q101, STripFET™ F7
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
18m Ω @ 22.5A, 10V
Mount :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Drain to Source Voltage (Vdss) :
100V
Packaging :
Cut Tape (CT)
Vgs (Max) :
±10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
60W Tc
ECCN Code :
EAR99
Continuous Drain Current (ID) :
45A
RoHS Status :
ROHS3 Compliant
Datasheets
STD47N10F7AG
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD47N10F7AG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:STD47, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, STD47N10F7AG pinout, STD47N10F7AG datasheet PDF, STD47N10F7AG amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD47N10F7AG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD47N10F7AG


N-Channel Cut Tape (CT) 18m Ω @ 22.5A, 10V ±10V 1640pF @ 50V 25nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

Description


The STD47N10F7AG is an Automotive-grade N-channel 100 V, 12.5 m|? typ., 45 A, STripFET? F7 Power MOSFET in a DPAK package. With an improved trench gate structure and STripFET? F7 technology, this N-channel Power MOSFET has an extremely low on-state resistance and lower internal capacitance and gate charge for quicker and more effective switching.



Features


  • Excellent FoM (figure of merit)

  • Low Crss/Ciss ratio for EMI immunity

  • High avalanche ruggedness

  • AEC-Q101 qualified

  • Among the lowest RDS(on) on the market



Applications


  • Switching applications

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters.

  • Automotive applications


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