STD45N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Radiation Hardening :

No

Height :

2.4mm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 50V

Drain to Source Breakdown Voltage :

100V

Weight :

3.949996g

Operating Mode :

ENHANCEMENT MODE

Rise Time :

17ns

Turn On Delay Time :

15 ns

Factory Lead Time :

52 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

18m Ω @ 22.5A, 10V

Base Part Number :

STD45

Number of Channels :

1

Element Configuration :

Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Number of Pins :

3

Series :

DeepGATE™, STripFET™ VII

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

60W Tc

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Terminal Form :

Gull wing

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Fall Time (Typ) :

8 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.2mm

Continuous Drain Current (ID) :

45A

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Length :

6.6mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Turn-Off Delay Time :

24 ns

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)